About Us
Our group conducts research in advanced simulation, analysis, design, modelling, and fabrication of nanoelectronic devices. The work covers advanced materials for nanoelectronics, including TCAD-based simulation, device fabrication, and experimental characterisation for sensing and memory applications. The group also has strong expertise in the reliability physics of nanoscale devices.  The group also investigates the electronic properties of three-dimensional, two-dimensional, and one-dimensional semiconductor structures using a range of computational and theoretical approaches.

Research Area

• Advanced material based device and sensor fabrication
• Analog and mixed signal microelectronics circuit
• Digital logic circuits simulation using HSPICE
• Design techniques of FET-based Memory Application
• Fabrication and Characterization of semiconductor devices (ZnO)
• Photonics CMOS Sensor Array
• Nearest Neighbour Tight Binding Simulation
• Silicon, carbon-based and transition metal dichalcogenide monolayers device modeling
• SPICE/Compact modeling of semiconductor devices
• Quasi 3D, 2D and 1D carrier transport in nanostructure
• Variability and Reliability Issue in Nanoscale FET Devices