About Us
Our group carried out various types of research on advanced simulations and analysis  design, modelling and simulations  advanced materials for the nano-electronics device comprises TCAD simulation, fabrication and characterization of various sensing and memory applications. We also have expertise in reliability physics of nanoelectronics devices. We also explored the electronics properties of 3D, 2D and 1D semiconductor, through tight binding approach and Green’s function formalism.

Research Area

• Advanced material based device and sensor fabrication
• Analog and mixed signal microelectronics circuit
• Digital logic circuits simulation using HSPICE
• Design techniques of FET-based Memory Application
• Fabrication and Characterization of semiconductor devices (ZnO)
• Photonics CMOS Sensor Array
• Nearest Neighbour Tight Binding Simulation
• Silicon, carbon-based and transition metal dichalcogenide monolayers device modeling
• SPICE/Compact modeling of semiconductor devices
• Quasi 3D, 2D and 1D carrier transport in nanostructure
• Variability and Reliability Issue in Nanoscale FET Devices